SILICON WAFER MANUFACTURING PROCESSES

Mersen provides sustainable and efficient solutions, which guarantee the purity of the wafers and the control of hot zones during crystallisation.

 

Mersen also offers equipment and parts dedicated to the constraints of this industry:

 

Purified graphite crucible

Purified graphite heater

Graphite or C/C composite cylindrical thermal protection

Flexible felt and rigid carbon insulation for controlling the thermal gradients of crystalline growth

Carbon/Carbon composite threaded fasteners

Graphite heat exchanger.

 

THE SINGLE CRYSTAL GROWING PROCESS (CZOCHRALSKI METHOD - CZ)

 

This silicon crystallisation method at more than 1,425 C is used to manufacture large cylindrical single crystal ingots, owing to very precise control of the temperature gradient in the oven. These ingots are then sliced with a wire saw to obtain silicon "wafers", used in the micro-electronic and photovoltaic industries. Mersen supplies the following elements:

 

Purified graphite crucible

Purified graphite heating element

Hot zone rigid insulation

Graphite and C/C composite heat shield

Furnace insulation.

 

DIRECTIONAL SOLIDIFICATION SYSTEMS (DSS):

 

The cooling of the bath of molten silicon is controlled to obtain solidification of the ingot with very broad crystalline zones. These ingots are then sliced with a wire saw to obtain silicon "wafers", primarily used in the photovoltaic industry. Mersen supplies the following elements:

 

Purified graphite heating element

Hot zone rigid carbon insulation

Composite fasteners

Composite plate

Graphite heat exchanger.